The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology.

The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 30 dB gain with 22% poweradded efficiency @ POUT = 22 dBm for 802.11g and 27% power-added efficiency @ POUT = 24 dBm for 802.11b.

The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80°C), single-ended/differential power detectors which lower users’ cost on power control.

The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <4 mA) makes the SST12LP14 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP14 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.

The SST12LP14 is offered in 16-contact VQFN package.

SST12LP14 Features:

• High Gain
• High Linear Output Power
• Built-In Ultra-Low Power-Up/Power-Down Control
• Low Idle Current
• High-Speed Power-Up/Power-Down