The SST12LP15 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology.

The SST12LP15 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 35 dB gain with 26% poweradded efficiency @ POUT = 24 dBm for 802.11g and 29% power-added efficiency @ POUT = 25 dBm for 802.11b.

The SST12LP15 has excellent linearity, typically ~4% added EVM at 23.5 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 24+ dBm. SST12LP15 also has widerange (>25 dB), temperature-stable (~1 dB over 80°C), single-ended/differential power detectors which lower users’ cost on power control.

The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <2 mA) makes the SST12LP15 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP15 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.

The SST12LP15 is offered in 16-contact VQFN package.