SST29EE010-70 1 Mbit Page-Write EEPROM Memory


 

 

 

SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512 SPI serial flash memory is manufactured with SST’s proprietary, high-performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST25VF512 device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF512 device operates with a single 2.7-3.6V power supply.

The SST25VF512 device is offered in both 8-lead SOIC and 8-contact WSON packages.

29EE010-70-4CEH - 1MB SMALL SECTOR FLASH, 128KX8 TSOP (MOQ=156)

Data Sheet
29EE010-70-4CNH - 1MB SMALL SECTOR FLASH, 128KX8 PLCC

Data Sheet
29EE010-70-4CWH - 1MB SMALL SECTOR FLASH, 128KX8 TSOP (MOQ=208)

Data Sheet

 

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