The SST29VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29VE010 conform to JEDEC standard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29VE010 provide a typical Byte-Write time of 39 µsec. The entire memory, i.e., 128 KBytes, can be written page-by-page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29VE010 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29VE010 are offered with a guaranteed Page-Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST29VE010 are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST29VE010 significantly improves performance and reliability, while lowering power consumption. The SST29VE010 improves flexibility while lowering the cost for program, data, and configuration storage applications.
To meet high density, surface mount requirements, the SST29VE010 are offered in 32-lead PLCC and 32-lead TSOP packages. A 600-mil, 32-pin PDIP package is also available.
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