Micronas > HAL 526/535: Two-Wire Hall Effect Sensor Family

HAL 526/535: Two-Wire Hall Effect Sensor Family

HAL 526/535 Description

The HAL^® 526 and HAL^® 535 from Micronas are Hall switches produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off.

The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range.

The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40°C up to 125°C.

The HAL 526 and HAL 535 are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2

HAL 526/535 System Architecture

The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing.

Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/f_osc

HAL 526/535 Block Diagram

*Datasheets may be updated without notification

HAL 526/535 Features

Operates from 3.8 V to 24 V supply voltage
Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz
Overvoltage protection at all pins
Reverse-voltage protection at V DD-pin
Magnetic characteristics are robust against mechanical stress effects
Short-circuit protected open-drain output by thermal shut down
Constant switching points over a wide supply voltage range
The decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics
Ideal sensor for window lifter, ignition timing, and revolution counting in extreme automotive and industrial environments
EMC corresponding to DIN 40839