8-Chan Fail-Safe N-FET Driver to 36V

Manufacturer:
MFG Part #:

iC-MFN QFN24

Part #:
IC-MFNQFN24
Availability:
Short Lead Time
RoHS Status:
Unit Price:$4.21
Qty:
Minumum Qty: 45

Need a lower quantity?
Ask a Question
Call Me
Email This Page
 
 

Product Information

iC-MFN is a monolithically integrated, 8-channel level adjustment device which drives N-channel FETs. The internal circuit blocks have been designed in such a way that with single errors, such as open pins (VB, VBR, GND, GNDR) or the short-circuiting of two outputs, iC-MFN’s output stages switch to a predefined, safe low state. Externally connected Nchannel FET are thus shut down safely in the event of a single error. The inputs of the eight channels consist of a Schmitt trigger with a pull-down current source and are compatible with TTL and CMOS levels and are voltageproof up to 40 V. The eight channels have a currentlimited push-pull output stage and a pull-down resistor at the output. The hi-level at one of the inputs EN5, EN10 or ENFS defines the output hi-level and enables the outputs. The output hi-level is disabled with the lo-level at all inputs EN5, EN10 and ENFS or with the hi-level at more than one input. iC-MFN monitors the supply voltage at VB and VBR pin and the voltages at the two ground pins GND and GNDR. Both power supply pins VB and VBR and both pins GND and GNDR must be connected together externally in order to guarantee the safe low state of the output stages in the event of error. Should the supply voltage at VB undershoot a predefined threshold, the voltage monitor causes the outputs to be actively tied to GND via the lowside transistors. If the ground potential ceases to be applied to GND, the outputs are tied to GNDR by pull-down resistors. If the connection between the ground potential and the GND pin is disrupted, the highside and lowside transistors of the output stages are shut down and the outputs tied to GNDR via the pull-down resistors. If on the other hand the connection between ground potential and the GNDR pin is disrupted, only the output stage highside transistors are shut down; the outputs are then actively tied to GND via the lowside transistors. Pull-down currents provide the safe lo-level at open inputs IN1. . . 8, EN5, EN10 and ENFS. The pulldown currents have two stages in order to minimize power dissipation with enhanced noise immunity. The status of the device is indicated with the Open- Drain pin NOK and can be used for system diagnostics. Temperature monitoring protects the device from too high power dissipation. The device is protected against destruction by ESD.
 

Features

8-fold level shift up to 40 V output voltage
Ground and supply voltage monitor
Inputs compatible with TTL and CMOS levels, 40 V voltage proof
Level shift configurable to 5 V, 10 V or supply voltage
Protective ESD circuitry
Safe low output state with single errors
Short-circuit-proof push-pull current sources for driving FETs slowly
Status output for error and system diagnostics
Temperature range from -40 to 125 C
 

Documents

Previously Viewed Products