The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R1001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
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