Ferroelectric Random Access Memory chip 1 M Bit (128 K × 8)

Manufacturer:
MFG Part #:

MB85R1001PFTN-GE1

Part #:
MB85R1001PFTNGE
Availability:
Short Lead Time
RoHS Status:
Unit Price:$17.00
Qty:
Minumum Qty: 1
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Product Information

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The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1001 is able to retain data without using a back-up battery, as is needed for SRAM.
Fujitsu MB85R1001
The memory cells used in the MB85R1001 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R1001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
Symmetry Electronics (and its e-commerce division: SemiconductorStore.com) is an authorized Fujitsu distributor.
 

Features

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Bit configuration: 131,072 words 8bits
Read/write endurance: 1010 times/bit (Min)
Operating power supply voltage: 3.0 V to 3.6 V
Operating temperature range: - 20 C to + 85 C
Data retention 10 years (+ 55 C)
Package: 48-pin plastic TSOP (1)
 

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