Memory FRAM 4 M Bit (512 K × 8)

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The Fujitsu MB85R4001A is a 4M Bit FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM.
Fujitsu MB85R4001A
The memory cells used in the MB85R4001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R4001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
Symmetry Electronics (and its e-commerce division: is an authorized Fujitsu distributor.


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Bit configuration: 4M Bit (524,288 words 8)
Read/write endurance: 10^10 times / byte
Data retention: 10 years (+ 55 C), 55 years (+ 35 C)
Operating power supply voltage: 3.0 V to 3.6 V
Low power operation: Operating power supply current 15 mA (Typ) Standby current 50 μA (Typ)
Operation ambient temperature range: - 40 C to + 85 C
Package : 48-pin plastic TSOP (FPT-48P-M48)
RoHS compliant

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Memory FRAM 4 M Bit (512 K × 8)
Part #: MB85R4001APFCN
Memory FRAM 4 M Bit (512 K × 8)