Memory FRAM 1 M Bit (128 K x 8)

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The Fujitsu MB85R1001A is a 1M Bit FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM which will reduce power requirements.
The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

Symmetry Electronics (and its e-commerce division: is an authorized Fujitsu distributor


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Bit configuration: 1M Bit (131,072 words x 8 bits)
Read/write endurance: 10^10 times
Operating power supply voltage: 3.0 V to 3.6 V
Operating temperature range: - 40 C to + 85 C
Data retention: 10 years (+ 55 C)
Package: 48-pin plastic TSOP


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Operating Temp
-40 to +85 °C
Package Details
48 Pin TSOP
RAM Size
1.0 MBytes
3.6 MAX V
3.0 MIN V

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Memory FRAM 1 M Bit (128 K x 8)
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Memory FRAM 1 M Bit (128 K x 8)