MB85R256H is a 256K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, MB85R256H is able to retain data without back-up battery.
The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit,significantly outperforming Flash memory and E2PROM in durability.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
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