“The following product is no recommended for new designs. Please use this updated/replacement part:
MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS128A adopts the Serial Peripheral Interface (SPI). The MB85RS128A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS128A does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS128A takes no wait time.