“The following product is no recommended for new designs. Please use this updated/replacement part:
MB85RS256A is a 256K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256A adopts the Serial Peripheral Interface (SPI). The MB85RS256A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256A can be used for 1010
read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2
PROM. MB85RS256A does not take long time to write data unlike Flash memories nor E2
PROM, and MB85RS256A takes no wait time.