FRAM with 256K (32,768 x 8) Bit EEPROM interface SOP 28pin package

Manufacturer:
MFG Part #:

MB85R256FPF-G-BNDE1

Part #:
MB85R256FPF-G-BNDE1
Availability:
In Stock
RoHS Status:
End Of Life:
6/20/2017
 
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Product Information

The Fujitsu MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip with 256K of memory in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
   
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.   
The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
   
The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
   
 

Features

Bit configuration: 256K Bit (32,768 words 8 bits)
Read/write endurance: 1012 times / byte
Data retention: 10 years ( + 85 C), 95 years ( + 55 C), over 200 years ( + 35 C)
Operating power supply voltage: 2.7 V to 3.6 V
Low power consumption: Operating power supply current 5 mA (Typ)
Standby current 5μA (Typ)
Operation ambient temperature range: - 40 C to + 85 C
Package: 28-pin plastic SOP (FPT-28P-M17)
RoHS compliant
 

Specifications

Operating Temp
-40 to +85 °C
Package Details
28 pin SOP
VDD Max
2.7 MIN V
VDD Max
3.6 MAX V
 

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