The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 1012 cycles, significantly outperforming Flash memory and E²PROM in the number.
The MB85RC64A does not need a pollingsequence after writing to the memory such as the case of Flash memory or E²PROM.
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