The
Fujitsu MB85R1002A is a 1M Bit FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1002A can be used for 10
10 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.
The MB85R1002A uses a pseudo-SRAM interface that is compatible withconventional asynchronous SRAM.
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