The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash memory or E²PROM.
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