256kbit FRAM with x8 parallel interface - SOIC28 T&R

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Minumum Qty: 1000
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The Fujitsu MB85R256F is a 256K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.

The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

Fujitsu MB85R256F_001.jpg

Symmetry Electronics (and its e-commerce division: SemiconductorStore.com) is an authorized Fujitsu distributor.


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Bit configuration: 256K Bit (32,768 words 8 bits)
Read/write endurance : 10^12 times / byte
Data retention : 10 years ( +85 C), 95 years ( +55 C), over 200 years ( +35 C)
Operating power supply voltage : 2.7 V to 3.6 V
Low power consumption : Operating power supply current 5 mA (Typ)
- Standby current 5μA (Typ)
Operation ambient temperature range: -40 C to +85 C
Package : 28-pin plastic SOP (FPT-28P-M17)
- 28-pin plastic SOP (FPT-28P-M01)
RoHS compliant


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Operating Temp
-40 to +85 °C
Package Details
28 pin SOP
RAM Size
256 KBytes
3.6 MIN V
2.7 MIN V

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