MB85R256F is a 256K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R256F can be used for 1012
read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.
The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
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