MB85RC16V is a 16K Bit FRAM (Ferroelectric Random A ccess Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16V have at least 1012
Read/Write operation endurance per byte, which is a significant improvement over the number of read and write operations supported by other non-volatile memory products.
The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike Flash memory and E²PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.
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