MB85RS128B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS128B adopts the Serial Peripheral Interface (SPI).
The MB85RS128B is able to retaindata without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS128B can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM. MB85RS128B does not take long time towrite data like Flash memories or E²PROM, and MB85RS128B takes no wait time.
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