MB85R1001A is a1M Bit FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1001A can be used for 1010
read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.
The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
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