4Mbit FRAM with x8 parallel interface - TSOP48

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The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words ×8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4001A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.

The MB85R4001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

Fujitsu MB85R4001A_001.jpg

Symmetry Electronics (and its e-commerce division: SemiconductorStore.com) is an authorized Fujitsu distributor.


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Bit configuration : 524,288 words 8 bits
Read/write endurance : 1010 times / byte
Data retention : 10 years ( +55 C), 55 years ( +35 C)
Operating power supply voltage : 3.0 V to 3.6 V
Low power operation : Operating power supply current 15 mA (Typ)
- Standby current 50 A (Typ)
Operation ambient temperature range : -40 C to +85 C
Package : 48-pin plastic TSOP (FPT-48P-M48)
- RoHS compliant

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