MB85RC16 is a 16K Bit FRAM (Ferroelectric Random AccessMemory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 1012
Read/Write operation endurance per byte, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products.
The MB85RC16 can provide writing inone byte units because the long writing time is not required unlike Flash memory and E²PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.
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