256kbit FRAM with x8 parallel interface - SOIC28 BULK

Manufacturer:
MFG Part #:

MB85R256FPNF-G-JNE2

Part #:
MB85R256FPNF-G-JNE2
Availability:
Short Lead Time
RoHS Status:
Unit Price:$3.73
Qty:
Minumum Qty: 1

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Product Information

The Fujitsu MB85R256F is a 256K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.

The MB85R256F uses a pseudo - SRAMinterface compatible with conventional asynchronous SRAM.




Fujitsu MB85R256F_001.jpg

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Features

Bit configuration: 256K Bit (32,768 words 8 bits)
Read/write endurance : 10^12 times / byte
Data retention : 10 years ( +85 C), 95 years ( +55 C), over 200 years ( +35 C)
Operating power supply voltage : 2.7 V to 3.6 V
Low power consumption : Operating power supply current 5 mA (Typ)
- Standby current 5μA (Typ)
Operation ambient temperature range: -40 C to +85 C
Package : 28-pin plastic SOP (FPT-28P-M17)
RoHS compliant
 

Specifications

Operating Temp
-40 to +85 °C
Package Details
28 Pin SOIC
RAM Size
256 KBytes
VDD Max
3.6 MAX V
VDD Min
2.7 MIN V
 

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