MB85RC04V is a 4K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words ×8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, the MB85RC04V is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC04V has improved to be at least 1012
cycles, significantly outperforming other nonvolatile memory products in the number.
The MB85RC04V does not need a polling sequence after writing tothe memory such as the case of Flash
memory or E²PROM.
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