MB85RS512T is a 512K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS512T adopts the Serial Peripheral Interface (SPI). The MB85RS512T is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS512T can be used for 1013
read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2
PROM. MB85RS512T does not take long time to write data like Flash memories or E2
PROM, and MB85RS512T takes no wait time.
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