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512K FRAM with 64 K × 8 Bit SPI CMOS

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MFG Part #:

MB85RS512TPNF-G-JNERE1

Part #:
MB85RS512TPNF-G-JNERE1
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Unit Price:$2.90
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Product Information Features Specifications Documents
 

Product Information

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The Fujitsu MB85RS512T is a 512K Bit FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RS512T adopts the Serial Peripheral Interface (SPI). The MB85RS512T is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS512T can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS512T does not take long time to write data like Flash memories or E2PROM, and MB85RS512T takes no wait time.




Symmetry Electronics (and its e-commerce division: SemiconductorStore.com) is an authorized Fujitsu-FSA distributor.
 

Features

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Bit configuration : 512K Bit (65,536 words 8 bits)
SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max) 2.7 V to 3.6 V, 30 MHz (Max) For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)
High endurance : 10^13 times / byte
Data retention : 10 years (+85 C)
Operating power supply voltage : 1.8 V to 3.6 V
Low power consumption : Operating power supply current 10 mA (Max@30 MHz) Standby current 120μA (Max) Sleep current 10μA (Max)
Operation ambient temperature range : -40 C to +85 C
Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant
 

Specifications

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Operating Temp
-40 to +85 °C
Package Details
8-pin SOP
RAM Size
512 KBytes
VDD Max
3.6 MAX V
VDD Min
1.8 MIN V
 

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512K FRAM with 64 K × 8 Bit SPI CMOS
Part #: MB85RS512TPNF-G-JNERE1
512K FRAM with 64 K × 8 Bit SPI CMOS