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The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.

Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.

The memory cells used in the MB85RC16 have at least 10¹⁰  Read/Write operation endurance per bit, which is a significant improvement over the number of read and write operations supported by other non-volatile memory products.