FRAM (Ferroelectric RAM) Memory IC 4Mb (512K x 8) SPI - Quad I/O 108MHz 16-SOP

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MB85RQ4ML is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RQ4ML adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O).

The MB85RQ4ML is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RQ4ML can be used for 10 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.

MB85RQ4ML does not take long time to write data like Flash memories or E²PROM.

MB85RQ4ML is able to write data at a high bandwidth without any waiting time and fits perfectly into Networking, Gaming, Industrial computing, Camera, RAID controllers, etc.

Symmetry Electronics is an authorized Fujitsu Electronics distributor.


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Bit configuration : 524,288 words 8 bits
Serial Peripheral Interface : SPI (Serial Peripheral Interface) / Quad SPI
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Write supports : Single data input / Quad data input / Quad address and data input /
QPI mode
Read supports : Single data output / Fast single data output / Fast quad data output /
Fast quad address input and data output / QPI mode / XIP mode
Operating frequency : 108 MHz (Except normal READ command)
High endurance : 1013 Read/Write per byte
Data retention : 10 years (+85 C), 95 years ( + 55 C), over 200 years ( + 35 C)
Operating power supply voltage : 1.7 V to 1.95 V (Single power supply)
Power consumption : Operating power supply current 20.0 mA (Typ@Quad I/O 108 MHz)
Standby current 70 A (Typ), 400 A (Max)
Operation ambient temperature range : -40 C to +85 C
Package : 16-pin plastic SOP (FPT-16P-M24)
RoHS compliant

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