FRAM (Ferroelectric RAM) Memory IC 512Kb (64K x 8) SPI 30MHz 8-SOP

Manufacturer:
MFG Part #:

MB85RS512TPNF-G-JNE1

Part #:
MB85RS512TPNF-G-JNE1
Availability:
Short Lead Time
Unit Price:$2.93
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Minumum Qty: 1
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Product Information

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MB85RS512T is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RS512T adopts the Serial Peripheral Interface (SPI).

The MB85RS512T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS512T can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E²PROM.

MB85RS512T does not take long time to write data like Flash memories or E²PROM, and MB85RS512T takes no wait time.

Symmetry Electronics is an authorized Fujitsu Electronics distributor.
 

Features

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Bit configuration : 65,536 words 8 bits
Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max)
2.7 V to 3.6 V, 30 MHz (Max)
For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)
High endurance : 1013 times / byte
Data retention : 10 years (+85 C)
Operating power supply voltage : 1.8 V to 3.6 V
Low power consumption : Operating power supply current 10 mA (Max@30 MHz)
Standby current 120 A (Max)
Sleep current 10 A (Max)
Operation ambient temperature range : -40 C to +85 C
Package : 8-pin plastic SOP (FPT-8P-M02)
RoHS compliant
 

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