2Gb SPI NAND Flash 1.65V-2.0V WSON8 (8*6mm)

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GigaDevice GD5F2GQ4RCYIG 2Gb SPI NAND Flash 1.65V-2.0V WSON8 (8*6mm) productss benefit the user with the low cost per bit and high densities (capacities) of SLC NAND Flash, while maintaining all the advantages of SPI NOR Flash.
Until recently, these applications have been in a “no man’s land” for non-volatile IC memory solutions. Now GigaDevice Semiconductor offers a perfect solution to designers of these applications with adequate density as well as an efficient interface. The solution is SPI NAND Flash.
For the first time, designers of electronic systems have a solution for non-volatile IC memory applications that require:
  • 1Gbit to 4Gbit Flash capacity
  • Low-cost, convenient SPI access
  • Small physical size
  • High-reliability

Typical “embedded” markets that require significant amounts of non-volatile memory are:

  • Smart Watches
  • Biometric “wearable” consumer/medical products
  • Smart Televisions/Displays
  • Set-Top Boxes for Cable or Satellite Receivers
  • Wi-Fi and Network Access Ports




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Single-Level Cell (SLC) Technology
-High reliability
-Promised good block0
- Minimum 50,000 Program/Erase Cycles
- Data retention: 10 years
High Data Rate
-120MHz for fast read with 30PF load
-Quad I/O Data transfer up to 480Mbits/s
Advanced NAND Flash Features
-Internal ECC option, 8bit per 528bytes
-Internal data move by page with ECC
Program/Erase/Read Speed
-Page Program time: 420us typical
-Block Erase time:3ms typical
-Page Read time: 80us maximum(with ECC)
Security Features
-4 x 2112bytes page OTP area
-Selected write-prohibit blocks for security

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