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The MB85RC64TA is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC64TA is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64TA has improved to be at least 1013 cycles, significantly outperforming Flash memory and E2PROM in the number.

The MB85RC64TA does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.